CALIBRATION OF THE NUMERICAL SIMULATIONS IN THE DESIGN OF HIGH TEMPERATURE IGBTs
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چکیده
In this paper we report on the calibration of the modelling program recently developed in the Department of Electronics and Electrical Engineering at Glasgow University for the simulation of IGBTs and other power semiconductor devices1 . The devices used for this purpose were 600V IGBTs fabricated by GEC Plessey Semiconductors. The calibration involves the identification and proper description of the most critical parts of the device structure and selection of appropriate models for the material and transport parameters and their temperature dependence.
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تاریخ انتشار 1994